2N3866

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2N3866
Silicon NPN Transistor
Frequency Multiplier and Driver in VHF/UHF
Transmitters
WIN
Transceiver
C B E
Absolute Maximum Ratings:
Collector-Emitter Voltage, V
CEO
30V
Collector-Base Voltage, V
CBO
55V
Emitter-Base Voltage, V
EBO
3.5V
Continuous Collector Current, I
C
400mA
Total Device Dissipation (T
C
= +25°C), P
D
5W
Derate above 25°C
28.6mW/°C
Storage Temperature Range, T
stg
-65°C to +200°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector-Emitter Breakdown Voltage
V
CER(sus)
I
C
= 5mA, R
BE
= 10 Ohm
55
-
-
V
Collector-Emitter Sustaining Voltage
V
CEO(sus)
I
C
= 5mA, I
B
= 0
30
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
F
= 100µA, I
C
= 0
3.5
-
-
V
Collector Cutoff Current
I
CEO
V
CE
= 28V, I
B
= 0
-
- 0.02 mA
I
CEX
V
CE
= 30V, V
BE
= -1.5V, T
C
= +200°C
-
-
5.0 mA
V
CE
= 55V, V
BE
= -1.5V
-
-
0.1 mA
Emitter Cutoff Current
I
EBO
V
BE
= 3.5V, I
C
= 0
-
-
0.1 mA
ON Characteristics
DC Current Gain
h
FE
I
C
= 50mA, V
CE
= 5V
25
-
200
2N3866
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 100mA, I
B
= 20mA
-
-
1.0
V
Small-Signal Characteristics
Current-Gain Bandwidth Product
f
T
I
C
= 50mA, V
CE
= 15V, f = 200MHz
800 -
- MHz
Output Capacitance
C
obo
V
CB
= 28V, I
E
= 0, f = 1MHz
-
-
3.0 pF
Functional Test
Common Emitter Amplifier Power Gain
G
PE
P
OUT
= 1W, V
CC
= 28V, f = 400MHz
10
-
-
dB
Collector Efficiency
P
OUT
= 1W, V
CC
= 20V, f = 400MHz
45
-
-
%
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