2n2222, PDF, datasheet
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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
2N2222; 2N2222A
NPN switching transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 29
Philips Semiconductors
Product specification
NPN switching transistors
2N2222; 2N2222A
FEATURES
PINNING
·
High current (max. 800 mA)
PIN
DESCRIPTION
·
Low voltage (max. 40 V).
1
emitter
2
base
APPLICATIONS
3
collector, connected to case
·
Linear amplification and switching.
DESCRIPTION
handbook, halfpage
1
3
2
NPN switching transistor in a TO-18 metal package.
PNP complement: 2N2907A.
2
3
MAM264
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
2N2222
-
60
V
2N2222A
-
75
V
V
CEO
collector-emitter voltage
open base
2N2222
-
30
V
2N2222A
-
40
V
I
C
collector current (DC)
-
800
mA
P
tot
total power dissipation
T
amb
£
25
°
C
-
500
mW
h
FE
DC current gain
I
C
= 10 mA; V
CE
=10V
75
-
f
T
transition frequency
I
C
= 20 mA; V
CE
= 20 V; f = 100 MHz
2N2222
250
-
MHz
2N2222A
300
-
MHz
t
off
turn-off time
I
Con
= 150 mA; I
Bon
= 15 mA; I
Boff
=
-
15 mA
-
250
ns
1997 May 29
2
Philips Semiconductors
Product specification
NPN switching transistors
2N2222; 2N2222A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
2N2222
-
60
V
2N2222A
-
75
V
V
CEO
collector-emitter voltage
open base
2N2222
-
30
V
2N2222A
-
40
V
V
EBO
emitter-base voltage
open collector
2N2222
-
5
V
2N2222A
-
6
V
I
C
collector current (DC)
-
800
mA
I
CM
peak collector current
-
800
mA
I
BM
peak base current
-
200
mA
P
tot
total power dissipation
T
amb
£
25
°
C
-
500
mW
T
case
£
25
C
-
1.2
W
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
200
°
C
T
amb
operating ambient temperature
-
65
+150
°
C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient in free air
350
K/W
R
th j-c
thermal resistance from junction to case
146
K/W
1997 May 29
3
°
Philips Semiconductors
Product specification
NPN switching transistors
2N2222; 2N2222A
CHARACTERISTICS
T
j
=25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
I
CBO
collector cut-off current
2N2222
I
E
= 0; V
CB
=50V
-
10
nA
I
E
= 0; V
CB
= 50 V; T
amb
= 150
°
C
-
10
m
A
I
CBO
collector cut-off current
2N2222A
I
E
= 0; V
CB
=60V
-
10
nA
I
E
= 0; V
CB
= 60 V; T
amb
= 150
°
C
-
10
m
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=3V
-
10
nA
h
FE
DC current gain
I
C
= 0.1 mA; V
CE
=10V
35
-
I
C
= 1 mA; V
CE
=10V
50
-
I
C
= 10 mA; V
CE
=10V
75
-
I
C
= 150 mA; V
CE
= 1 V; note 1
50
-
I
C
= 150 mA; V
CE
= 10 V; note 1
100
300
h
FE
DC current gain
I
C
= 10 mA; V
CE
= 10 V; T
amb
=
-
55
°
C
2N2222A
35
-
h
FE
DC current gain
I
C
= 500 mA; V
CE
= 10 V; note 1
2N2222
30
-
2N2222A
40
-
V
CEsat
collector-emitter saturation voltage
2N2222
I
C
= 150 mA; I
B
= 15 mA; note 1
-
400
mV
I
C
= 500 mA; I
B
= 50 mA; note 1
-
1.6
V
V
CEsat
collector-emitter saturation voltage
2N2222A
I
C
= 150 mA; I
B
= 15 mA; note 1
-
300
mV
I
C
= 500 mA; I
B
= 50 mA; note 1
-
1
V
V
BEsat
base-emitter saturation voltage
2N2222
I
C
= 150 mA; I
B
= 15 mA; note 1
-
1.3
V
I
C
= 500 mA; I
B
= 50 mA; note 1
-
2.6
V
V
BEsat
base-emitter saturation voltage
2N2222A
I
C
= 150 mA; I
B
= 15 mA; note 1
0.6
1.2
V
I
C
= 500 mA; I
B
= 50 mA; note 1
-
2
V
C
c
collector capacitance
I
E
=i
e
= 0; V
CB
= 10 V; f = 1 MHz
-
8
pF
C
e
emitter capacitance
I
C
=i
c
= 0; V
EB
= 500 mV; f = 1 MHz
2N2222A
-
25
pF
f
T
transition frequency
I
C
= 20 mA; V
CE
= 20 V; f = 100 MHz
2N2222
250
-
MHz
2N2222A
300
-
MHz
F
noise figure
I
C
= 200
m
A; V
CE
=5V; R
S
=2k
W
;
f = 1 kHz; B = 200 Hz
2N2222A
-
4
dB
1997 May 29
4
Philips Semiconductors
Product specification
NPN switching transistors
2N2222; 2N2222A
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Switching times (between 10% and 90% levels);
see Fig.2
t
on
turn-on time
I
Con
= 150 mA; I
Bon
= 15 mA; I
Boff
=
-
15 mA
-
35
ns
t
d
delay time
-
10
ns
t
r
rise time
-
25
ns
t
off
turn-off time
-
250
ns
t
s
storage time
-
200
ns
t
f
fall time
-
60
ns
Note
1. Pulse test: t
p
£
300
m
s;
d£
0.02.
ndbook, full pagewidth
V
BB
V
CC
R
B
R
C
oscilloscope
(probe)
450
W
V
o
(probe)
450
W
oscillo
scope
V
i
R2
DUT
R1
MLB826
V
i
= 9.5 V; T = 500
m
s; t
p
=10
m
s; t
r
=t
f
£
3 ns.
R1 = 68
; R2 = 325
W
; R
B
= 325
W
; R
C
= 160
W
.
V
BB
=
-
3.5 V; V
CC
= 29.5 V.
Oscilloscope input impedance Z
i
=50
W
.
Fig.2 Test circuit for switching times.
1997 May 29
5
W
[ Pobierz całość w formacie PDF ]
zanotowane.pl doc.pisz.pl pdf.pisz.pl charloteee.keep.pl
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
2N2222; 2N2222A
NPN switching transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 29
Philips Semiconductors
Product specification
NPN switching transistors
2N2222; 2N2222A
FEATURES
PINNING
·
High current (max. 800 mA)
PIN
DESCRIPTION
·
Low voltage (max. 40 V).
1
emitter
2
base
APPLICATIONS
3
collector, connected to case
·
Linear amplification and switching.
DESCRIPTION
handbook, halfpage
1
3
2
NPN switching transistor in a TO-18 metal package.
PNP complement: 2N2907A.
2
3
MAM264
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
2N2222
-
60
V
2N2222A
-
75
V
V
CEO
collector-emitter voltage
open base
2N2222
-
30
V
2N2222A
-
40
V
I
C
collector current (DC)
-
800
mA
P
tot
total power dissipation
T
amb
£
25
°
C
-
500
mW
h
FE
DC current gain
I
C
= 10 mA; V
CE
=10V
75
-
f
T
transition frequency
I
C
= 20 mA; V
CE
= 20 V; f = 100 MHz
2N2222
250
-
MHz
2N2222A
300
-
MHz
t
off
turn-off time
I
Con
= 150 mA; I
Bon
= 15 mA; I
Boff
=
-
15 mA
-
250
ns
1997 May 29
2
Philips Semiconductors
Product specification
NPN switching transistors
2N2222; 2N2222A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
2N2222
-
60
V
2N2222A
-
75
V
V
CEO
collector-emitter voltage
open base
2N2222
-
30
V
2N2222A
-
40
V
V
EBO
emitter-base voltage
open collector
2N2222
-
5
V
2N2222A
-
6
V
I
C
collector current (DC)
-
800
mA
I
CM
peak collector current
-
800
mA
I
BM
peak base current
-
200
mA
P
tot
total power dissipation
T
amb
£
25
°
C
-
500
mW
T
case
£
25
C
-
1.2
W
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
200
°
C
T
amb
operating ambient temperature
-
65
+150
°
C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient in free air
350
K/W
R
th j-c
thermal resistance from junction to case
146
K/W
1997 May 29
3
°
Philips Semiconductors
Product specification
NPN switching transistors
2N2222; 2N2222A
CHARACTERISTICS
T
j
=25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
I
CBO
collector cut-off current
2N2222
I
E
= 0; V
CB
=50V
-
10
nA
I
E
= 0; V
CB
= 50 V; T
amb
= 150
°
C
-
10
m
A
I
CBO
collector cut-off current
2N2222A
I
E
= 0; V
CB
=60V
-
10
nA
I
E
= 0; V
CB
= 60 V; T
amb
= 150
°
C
-
10
m
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=3V
-
10
nA
h
FE
DC current gain
I
C
= 0.1 mA; V
CE
=10V
35
-
I
C
= 1 mA; V
CE
=10V
50
-
I
C
= 10 mA; V
CE
=10V
75
-
I
C
= 150 mA; V
CE
= 1 V; note 1
50
-
I
C
= 150 mA; V
CE
= 10 V; note 1
100
300
h
FE
DC current gain
I
C
= 10 mA; V
CE
= 10 V; T
amb
=
-
55
°
C
2N2222A
35
-
h
FE
DC current gain
I
C
= 500 mA; V
CE
= 10 V; note 1
2N2222
30
-
2N2222A
40
-
V
CEsat
collector-emitter saturation voltage
2N2222
I
C
= 150 mA; I
B
= 15 mA; note 1
-
400
mV
I
C
= 500 mA; I
B
= 50 mA; note 1
-
1.6
V
V
CEsat
collector-emitter saturation voltage
2N2222A
I
C
= 150 mA; I
B
= 15 mA; note 1
-
300
mV
I
C
= 500 mA; I
B
= 50 mA; note 1
-
1
V
V
BEsat
base-emitter saturation voltage
2N2222
I
C
= 150 mA; I
B
= 15 mA; note 1
-
1.3
V
I
C
= 500 mA; I
B
= 50 mA; note 1
-
2.6
V
V
BEsat
base-emitter saturation voltage
2N2222A
I
C
= 150 mA; I
B
= 15 mA; note 1
0.6
1.2
V
I
C
= 500 mA; I
B
= 50 mA; note 1
-
2
V
C
c
collector capacitance
I
E
=i
e
= 0; V
CB
= 10 V; f = 1 MHz
-
8
pF
C
e
emitter capacitance
I
C
=i
c
= 0; V
EB
= 500 mV; f = 1 MHz
2N2222A
-
25
pF
f
T
transition frequency
I
C
= 20 mA; V
CE
= 20 V; f = 100 MHz
2N2222
250
-
MHz
2N2222A
300
-
MHz
F
noise figure
I
C
= 200
m
A; V
CE
=5V; R
S
=2k
W
;
f = 1 kHz; B = 200 Hz
2N2222A
-
4
dB
1997 May 29
4
Philips Semiconductors
Product specification
NPN switching transistors
2N2222; 2N2222A
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Switching times (between 10% and 90% levels);
see Fig.2
t
on
turn-on time
I
Con
= 150 mA; I
Bon
= 15 mA; I
Boff
=
-
15 mA
-
35
ns
t
d
delay time
-
10
ns
t
r
rise time
-
25
ns
t
off
turn-off time
-
250
ns
t
s
storage time
-
200
ns
t
f
fall time
-
60
ns
Note
1. Pulse test: t
p
£
300
m
s;
d£
0.02.
ndbook, full pagewidth
V
BB
V
CC
R
B
R
C
oscilloscope
(probe)
450
W
V
o
(probe)
450
W
oscillo
scope
V
i
R2
DUT
R1
MLB826
V
i
= 9.5 V; T = 500
m
s; t
p
=10
m
s; t
r
=t
f
£
3 ns.
R1 = 68
; R2 = 325
W
; R
B
= 325
W
; R
C
= 160
W
.
V
BB
=
-
3.5 V; V
CC
= 29.5 V.
Oscilloscope input impedance Z
i
=50
W
.
Fig.2 Test circuit for switching times.
1997 May 29
5
W
[ Pobierz całość w formacie PDF ]