2SC5027, Elektronika, Datashet, tranzystory
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UNISONIC TECHNOLOGIES CO., LTD
2SC5027
NPN SILICON TRANSISTOR
HIGH VOLTAGE AND HIGH
RELIABILITY
.
FEATURES
1
* High Voltage (V
CEO
= 800V)
* High Speed Switching
* Wide SOA
TO-220
1
TO-220F
*Pb-free plating product number: 2SC5027L
ORDERING INFORMATION
Order Number
Package
Pin Assignment
Packing
Normal
Lead Free Plating
1
2
3
2SC5027-x-TA3-T
2SC5027L-x-TA3-T
TO-220
B
C
E
Tube
2SC5027-x-TF3-T
2SC5027L-x-TF3-T
TO-220F
B
C
E
Tube
2SC5027L-x-TA 3-T
(1)Packing Type
(2)Package Type
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F
(3)Rank
(4)Lead Plating
(3) x: refer to Classification of h
FE1
(4) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
1 of 4
Copyright © 2005 Unisonic Technologies Co., Ltd
QW-R203-027,C
2SC5027
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Tc = 25
Ċ
)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
850
V
Collector-Emitter Voltage
V
CEO
800
V
Collector-Emitter Voltage
V
EBO
7
V
Peak Collector Current
I
C
3
A
Collector Current (Pulse)
I
CP
10
A
Base Current
I
B
1.5
A
Power Dissipation
P
C
50
W
Junction Temperature
T
J
150
Ċ
Storage Temperature
T
STG
-55 ~ +150
Ċ
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
C
= 25
Ċ
, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
BV
CBO
I
C
=1mA, I
E
=0
850
V
Collector-Emitter Breakdown Voltage
BV
CEO
I
C
=5mA, I
B
=0
800
V
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=1mA, I
C
=0
7
V
Collector-Emitter sustaining Voltage V
CEX(SUS)
I
C
=1.5A, I
B1
= -I
B2
=0.3A
L=2mH, Clamped
800
V
Collector Cut-off Current
I
CBO
CB
=800V, I
E
=0
10
µA
Emitter Cut-off Current
I
EBO
EB
=5V, I
C
=0
10
µA
DC Current Gain
h
FE1
CE
=5V, I
C
=0.2A
10
40
h
FE 2
CE
=5V, I
C
=1A
8
Collector-Emitter Saturation Voltage
V
CE (SAT)
C
=1.5A, I
B
=0.3A
2
V
Base-Emitter Saturation Voltage
V
BE (SAT)
C
=1.5A, I
B
=0.3A
1.5
V
Output Capacitance
Cob
V
CB
=10V, f=1MHz, I
E
=0
60
pF
Current Gain Bandwidth Product
f
T
CE
=10V, I
C
=0.2A
15
MHz
Turn ON Time
t
ON
V
CC
=400V
I
C
=5I
B1
= -2.5I
B2
=2A
R
L
=200
Ƹ
0.5
µs
Storage Time
t
S
3
µs
Fall Time
t
F
0.3
µs
CLASSIFICATION of h
FE1
RANK
N
R
O
RANGE
10 ~ 20
15 ~ 30
20 ~ 40
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R203-027,C
2SC5027
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Static Characteristic
Collector Current vs. Collector-Emitter Voltage
Switching Time
Time vs. Collector -Emitter Voltage
4.0
10
3.6
3.2
2.8
2.4
2.0
1.6
1.2
1
I
B
=150 mA
I
B
=100 mA
0.1
I
B
=50 m A
0.8
0.4
I
B
=10mA
Vcc=400V
5. I
B
1 = - 2.5.I
B
2=Ic
1ms
0. 0 1
0.1
0.0
0
1234567 890
1
10
Collector-Emitter Voltage, V
CE
(V)
Collector-Emitter Voltage, V
CE
(V)
Collector Current vs. Base-Emitter Voltage
Saturation Voltage vs. Collector Current
4.0
10
V
CE
=5V
Ic=5I
B
3.5
3.0
2.5
1
V
BE(SAT)
2.0
1.5
0.1
1.0
V
CE(SAT)
0.5
0.0
0.01
0. 0 1
100us
1ms
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1
10
Base-Emitter Voltage, V
BE
(V)
Collector Current, I
C
(A)
DC Current Gain vs. Collector Current
Safe Operating Area
Collector Current vs. Collector-Emitter Voltage
1000
V
CE
=5V
100
I
CP(MAX )
10
100
I
C(MAX)
(Continuous )
1
10
0. 1
0.01
1
0.01
100us
1ms
1E-s
0.1
1
10
1
10
100
1000
5000
Collector Current, I
C
(A)
Collector-Emitter Voltage, V
CE
(V)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
www.unisonic.com.tw
QW-R203-027,C
2SC5027
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Power vs. Temperature Derating Curve
Reverse Bias Operating Area
Collector Current vs. Collector-Emitter Voltage
80
100
I
B2
=-0.3A
70
60
10
50
40
1
30
20
0.1
10
0
0.01
100us
1ms
0 50505
150
175
10
100
1000
5000
Temperature, T
C
(
Ċ
)
Collector-Emitter Voltage, V
CE
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
www.unisonic.com.tw
QW-R203-027,C
[ Pobierz całość w formacie PDF ]
zanotowane.pl doc.pisz.pl pdf.pisz.pl charloteee.keep.pl
UNISONIC TECHNOLOGIES CO., LTD
2SC5027
NPN SILICON TRANSISTOR
HIGH VOLTAGE AND HIGH
RELIABILITY
.
FEATURES
1
* High Voltage (V
CEO
= 800V)
* High Speed Switching
* Wide SOA
TO-220
1
TO-220F
*Pb-free plating product number: 2SC5027L
ORDERING INFORMATION
Order Number
Package
Pin Assignment
Packing
Normal
Lead Free Plating
1
2
3
2SC5027-x-TA3-T
2SC5027L-x-TA3-T
TO-220
B
C
E
Tube
2SC5027-x-TF3-T
2SC5027L-x-TF3-T
TO-220F
B
C
E
Tube
2SC5027L-x-TA 3-T
(1)Packing Type
(2)Package Type
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F
(3)Rank
(4)Lead Plating
(3) x: refer to Classification of h
FE1
(4) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
1 of 4
Copyright © 2005 Unisonic Technologies Co., Ltd
QW-R203-027,C
2SC5027
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Tc = 25
Ċ
)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
850
V
Collector-Emitter Voltage
V
CEO
800
V
Collector-Emitter Voltage
V
EBO
7
V
Peak Collector Current
I
C
3
A
Collector Current (Pulse)
I
CP
10
A
Base Current
I
B
1.5
A
Power Dissipation
P
C
50
W
Junction Temperature
T
J
150
Ċ
Storage Temperature
T
STG
-55 ~ +150
Ċ
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
C
= 25
Ċ
, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
BV
CBO
I
C
=1mA, I
E
=0
850
V
Collector-Emitter Breakdown Voltage
BV
CEO
I
C
=5mA, I
B
=0
800
V
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=1mA, I
C
=0
7
V
Collector-Emitter sustaining Voltage V
CEX(SUS)
I
C
=1.5A, I
B1
= -I
B2
=0.3A
L=2mH, Clamped
800
V
Collector Cut-off Current
I
CBO
CB
=800V, I
E
=0
10
µA
Emitter Cut-off Current
I
EBO
EB
=5V, I
C
=0
10
µA
DC Current Gain
h
FE1
CE
=5V, I
C
=0.2A
10
40
h
FE 2
CE
=5V, I
C
=1A
8
Collector-Emitter Saturation Voltage
V
CE (SAT)
C
=1.5A, I
B
=0.3A
2
V
Base-Emitter Saturation Voltage
V
BE (SAT)
C
=1.5A, I
B
=0.3A
1.5
V
Output Capacitance
Cob
V
CB
=10V, f=1MHz, I
E
=0
60
pF
Current Gain Bandwidth Product
f
T
CE
=10V, I
C
=0.2A
15
MHz
Turn ON Time
t
ON
V
CC
=400V
I
C
=5I
B1
= -2.5I
B2
=2A
R
L
=200
Ƹ
0.5
µs
Storage Time
t
S
3
µs
Fall Time
t
F
0.3
µs
CLASSIFICATION of h
FE1
RANK
N
R
O
RANGE
10 ~ 20
15 ~ 30
20 ~ 40
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R203-027,C
2SC5027
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Static Characteristic
Collector Current vs. Collector-Emitter Voltage
Switching Time
Time vs. Collector -Emitter Voltage
4.0
10
3.6
3.2
2.8
2.4
2.0
1.6
1.2
1
I
B
=150 mA
I
B
=100 mA
0.1
I
B
=50 m A
0.8
0.4
I
B
=10mA
Vcc=400V
5. I
B
1 = - 2.5.I
B
2=Ic
1ms
0. 0 1
0.1
0.0
0
1234567 890
1
10
Collector-Emitter Voltage, V
CE
(V)
Collector-Emitter Voltage, V
CE
(V)
Collector Current vs. Base-Emitter Voltage
Saturation Voltage vs. Collector Current
4.0
10
V
CE
=5V
Ic=5I
B
3.5
3.0
2.5
1
V
BE(SAT)
2.0
1.5
0.1
1.0
V
CE(SAT)
0.5
0.0
0.01
0. 0 1
100us
1ms
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1
10
Base-Emitter Voltage, V
BE
(V)
Collector Current, I
C
(A)
DC Current Gain vs. Collector Current
Safe Operating Area
Collector Current vs. Collector-Emitter Voltage
1000
V
CE
=5V
100
I
CP(MAX )
10
100
I
C(MAX)
(Continuous )
1
10
0. 1
0.01
1
0.01
100us
1ms
1E-s
0.1
1
10
1
10
100
1000
5000
Collector Current, I
C
(A)
Collector-Emitter Voltage, V
CE
(V)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
www.unisonic.com.tw
QW-R203-027,C
2SC5027
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Power vs. Temperature Derating Curve
Reverse Bias Operating Area
Collector Current vs. Collector-Emitter Voltage
80
100
I
B2
=-0.3A
70
60
10
50
40
1
30
20
0.1
10
0
0.01
100us
1ms
0 50505
150
175
10
100
1000
5000
Temperature, T
C
(
Ċ
)
Collector-Emitter Voltage, V
CE
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
www.unisonic.com.tw
QW-R203-027,C
[ Pobierz całość w formacie PDF ]