2sc1573, Elektronika, RTV Serwis, Aplikacje US, TRANZYSTORY
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Transistor
2SC1573, 2SC1573A, 2SC1573B
Silicon NPN triple diffusion planer type
For high breakdown voltage general amplification
For small TV video output
Complementary to 2SC1573 and 2SA0879 (2SA879)
Unit: mm
5.9
±
0.2
4.9
±
0.2
Features
High collector to emitter voltage V
CEO
.
High transition frequency f
T
.
Absolute Maximum Ratings
(Ta=25˚C)
0.7
±
0.1
Parameter
Symbol
Ratings
250
300
400
200
300
400
7
100
70
1
150
–55 ~ +150
Unit
2.54
±
0.15
2SC1573
2SC1573A
2SC1573B
2SC1573
2SC1573A
2SC1573B
Collector to
base voltage
V
CBO
V
Collector to
emitter voltage
V
CEO
V
0.45
+0.2
–0.1
0.45
+0.2
–0.1
1.27
1.27
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
EBO
I
CP
I
C
P
C
T
j
T
stg
V
mA
mA
W
˚C
˚C
1
2
3
Electrical Characteristics
(Ta=25˚C)
Parameter
Collector cutoff current
Symbol
I
CBO
Conditions
V
CB
= 12V, I
E
= 0
min
typ
max
2
Unit
µA
Collector to emitter
voltage
2SC1573
2SC1573A
2SC1573B
2SC1573
2SC1573A
2SC1573B
V
CEO
I
C
= 100µA, I
B
= 0
200
300
400
5
V
Emitter to base
voltage
V
EBO
I
E
= 1µA, I
C
= 0
7
V
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
h
FE
*
V
CE(sat)
f
T
V
CE
= 10V, I
C
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 10V, I
E
= –10mA, f = 200MHz
30
220
1.2
V
MHz
50
80
5
2SC1573
2SC1573A
2SC1573B
10
Collector output
capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz
4
8
pF
*
h
FE
Rank classification
Rank
P
Q
R
h
FE
30 ~ 100
60 ~ 150
100 ~ 220
*2SC1573 for Ranks Q and R only
Note.) The Part numbers in the Parenthesis show conventional part number.
1
Transistor
2SC1573, 2SC1573A, 2SC1573B
P
C
— Ta
I
C
— V
CE
I
C
— V
BE
1.2
120
120
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
Ta=25˚C
V
CE
=10V
1.0
100
I
B
=2mA
100
25˚C
0.8
80
80
Ta=75˚C
–25˚C
0.6
60
0.6mA
60
0.4mA
0.4
40
40
0.2mA
0.2
20
20
0
0
0
0
20
40
60
80
100
120
140
160
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta
(
˚C
)
Collector to emitter voltage V
CE
(
V
)
Base to emitter voltage V
BE
(
V
)
I
C
— I
B
V
CE(sat)
— I
C
I
B
— V
BE
120
100
3.0
I
C
/I
B
=10
V
CE
=10V
Ta=25˚C
V
CE
=10V
Ta=25˚C
30
100
2.5
10
80
2.0
3
60
1
1.5
Ta=75˚C
0.3
25˚C
40
1.0
0.1
–25˚C
20
0.5
0.03
0
0.01
0
0
0.4
0.8
1.2
1.6
2.0
0.1
0.3
1
3
10
30
100
0
0.2
0.4
0.6
0.8
1.0
Base current I
B
(
mA
)
Collector current I
C
(
mA
)
Base to emitter voltage V
BE
(
V
)
h
FE
— I
C
f
T
— I
E
C
ob
— V
CB
360
160
10
V
CE
=10V
V
CB
=10V
Ta=25˚C
I
E
=0
f=1MHz
Ta=25˚C
140
9
300
8
120
240
7
100
6
180
80
5
Ta=75˚C
25˚C
60
4
120
3
–25˚C
40
60
2
20
1
0
0
0
0.1
0.3
1
3
10
30
100
–1
–3
–10
–30
–100
1
3
10
30
100
Collector current I
C
(mA)
Emitter current I
E
(mA)
Collector to base voltage V
CB
(V)
2
Transistor
2SC1573, 2SC1573A, 2SC1573B
I
CBO
— Ta
I
EBO
— Ta
Area of safe operation (ASO)
10
4
10
4
1000
V
CB
=250V
V
EB
=5V
Single pulse
Ta=25˚C
300
10
3
10
3
100
I
CP
I
C
t=10ms
t=1ms
30
DC
10
2
10
2
10
3
10
10
1
0.3
1
1
0.1
0
40
80
120
160
200
0
40
80
120
160
200
1
3
10
30
100
300
1000
Ambient temperature Ta
(
˚C
)
Ambient temperature Ta
(
˚C
)
Collector to emitter voltage V
CE
(
V
)
3
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-
ment if any of the products or technologies described in this material and controlled under the
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative character-
istics and applied circuit examples of the products. It does not constitute the warranting of industrial
property, the granting of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or gen-
eral electronic equipment (such as office equipment, communications equipment, measuring in-
struments and household appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
•
Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchas-
ing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended,
so that such equipment may not violate relevant laws or regulations because of the function of our
products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life
and after-unpacking standby time) agreed upon when specification sheets are individually exchanged.
(7) No part of this material may be reprinted or reproduced by any means without written permission
from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but
there is always the possibility that further rectifications will be required in the future. Therefore,
Panasonic will not assume any liability for any damages arising from any errors etc. that may ap-
pear in this material.
C. These materials are solely intended for a customer's individual use.
Therefore, without the prior written approval of Panasonic, any other use such as reproducing,
selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR
[ Pobierz całość w formacie PDF ]
zanotowane.pl doc.pisz.pl pdf.pisz.pl charloteee.keep.pl
Transistor
2SC1573, 2SC1573A, 2SC1573B
Silicon NPN triple diffusion planer type
For high breakdown voltage general amplification
For small TV video output
Complementary to 2SC1573 and 2SA0879 (2SA879)
Unit: mm
5.9
±
0.2
4.9
±
0.2
Features
High collector to emitter voltage V
CEO
.
High transition frequency f
T
.
Absolute Maximum Ratings
(Ta=25˚C)
0.7
±
0.1
Parameter
Symbol
Ratings
250
300
400
200
300
400
7
100
70
1
150
–55 ~ +150
Unit
2.54
±
0.15
2SC1573
2SC1573A
2SC1573B
2SC1573
2SC1573A
2SC1573B
Collector to
base voltage
V
CBO
V
Collector to
emitter voltage
V
CEO
V
0.45
+0.2
–0.1
0.45
+0.2
–0.1
1.27
1.27
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
EBO
I
CP
I
C
P
C
T
j
T
stg
V
mA
mA
W
˚C
˚C
1
2
3
Electrical Characteristics
(Ta=25˚C)
Parameter
Collector cutoff current
Symbol
I
CBO
Conditions
V
CB
= 12V, I
E
= 0
min
typ
max
2
Unit
µA
Collector to emitter
voltage
2SC1573
2SC1573A
2SC1573B
2SC1573
2SC1573A
2SC1573B
V
CEO
I
C
= 100µA, I
B
= 0
200
300
400
5
V
Emitter to base
voltage
V
EBO
I
E
= 1µA, I
C
= 0
7
V
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
h
FE
*
V
CE(sat)
f
T
V
CE
= 10V, I
C
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 10V, I
E
= –10mA, f = 200MHz
30
220
1.2
V
MHz
50
80
5
2SC1573
2SC1573A
2SC1573B
10
Collector output
capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz
4
8
pF
*
h
FE
Rank classification
Rank
P
Q
R
h
FE
30 ~ 100
60 ~ 150
100 ~ 220
*2SC1573 for Ranks Q and R only
Note.) The Part numbers in the Parenthesis show conventional part number.
1
Transistor
2SC1573, 2SC1573A, 2SC1573B
P
C
— Ta
I
C
— V
CE
I
C
— V
BE
1.2
120
120
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
Ta=25˚C
V
CE
=10V
1.0
100
I
B
=2mA
100
25˚C
0.8
80
80
Ta=75˚C
–25˚C
0.6
60
0.6mA
60
0.4mA
0.4
40
40
0.2mA
0.2
20
20
0
0
0
0
20
40
60
80
100
120
140
160
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta
(
˚C
)
Collector to emitter voltage V
CE
(
V
)
Base to emitter voltage V
BE
(
V
)
I
C
— I
B
V
CE(sat)
— I
C
I
B
— V
BE
120
100
3.0
I
C
/I
B
=10
V
CE
=10V
Ta=25˚C
V
CE
=10V
Ta=25˚C
30
100
2.5
10
80
2.0
3
60
1
1.5
Ta=75˚C
0.3
25˚C
40
1.0
0.1
–25˚C
20
0.5
0.03
0
0.01
0
0
0.4
0.8
1.2
1.6
2.0
0.1
0.3
1
3
10
30
100
0
0.2
0.4
0.6
0.8
1.0
Base current I
B
(
mA
)
Collector current I
C
(
mA
)
Base to emitter voltage V
BE
(
V
)
h
FE
— I
C
f
T
— I
E
C
ob
— V
CB
360
160
10
V
CE
=10V
V
CB
=10V
Ta=25˚C
I
E
=0
f=1MHz
Ta=25˚C
140
9
300
8
120
240
7
100
6
180
80
5
Ta=75˚C
25˚C
60
4
120
3
–25˚C
40
60
2
20
1
0
0
0
0.1
0.3
1
3
10
30
100
–1
–3
–10
–30
–100
1
3
10
30
100
Collector current I
C
(mA)
Emitter current I
E
(mA)
Collector to base voltage V
CB
(V)
2
Transistor
2SC1573, 2SC1573A, 2SC1573B
I
CBO
— Ta
I
EBO
— Ta
Area of safe operation (ASO)
10
4
10
4
1000
V
CB
=250V
V
EB
=5V
Single pulse
Ta=25˚C
300
10
3
10
3
100
I
CP
I
C
t=10ms
t=1ms
30
DC
10
2
10
2
10
3
10
10
1
0.3
1
1
0.1
0
40
80
120
160
200
0
40
80
120
160
200
1
3
10
30
100
300
1000
Ambient temperature Ta
(
˚C
)
Ambient temperature Ta
(
˚C
)
Collector to emitter voltage V
CE
(
V
)
3
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-
ment if any of the products or technologies described in this material and controlled under the
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative character-
istics and applied circuit examples of the products. It does not constitute the warranting of industrial
property, the granting of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or gen-
eral electronic equipment (such as office equipment, communications equipment, measuring in-
struments and household appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
•
Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchas-
ing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended,
so that such equipment may not violate relevant laws or regulations because of the function of our
products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life
and after-unpacking standby time) agreed upon when specification sheets are individually exchanged.
(7) No part of this material may be reprinted or reproduced by any means without written permission
from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but
there is always the possibility that further rectifications will be required in the future. Therefore,
Panasonic will not assume any liability for any damages arising from any errors etc. that may ap-
pear in this material.
C. These materials are solely intended for a customer's individual use.
Therefore, without the prior written approval of Panasonic, any other use such as reproducing,
selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR
[ Pobierz całość w formacie PDF ]