2sc1384, Elektronika, RTV Serwis, Aplikacje US, TRANZYSTORY
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Transistors
2SC1383, 2SC1384
Silicon NPN epitaxial planar type
Unit: mm
For low-frequency power amplification and driver amplification
Complementary to 2SA0683, 2SA0684
5.9
±
0.2
4.9
±
0.2
Features
• Low collector-emitter saturation voltage V
CE(sat)
• Complementary pair with 2SA0683, 2SA0684
0.7
±
0.1
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SC1383
V
CBO
30
V
0.45
+0.2
–0.1
0.45
+0.2
–0.1
(Emitter open)
2SC1384
60
(1.27)
(1.27)
1: Emitter
2: Collector
3: Base
EIAJ: SC-51
TO-92L-A1 Package
Collector-emitter voltage
2SC1383
V
CEO
25
V
13
2
(Base open)
2SC1384
50
2.54
±
0.15
Emitter-base voltage (Collector open) V
EBO
5
V
Collector current
I
C
1
A
Peak collector current
I
CP
1.5
A
Collector power dissipation
P
C
1
W
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
2SC1383
V
CBO
I
C
= 10 µA, I
E
= 0
30
V
(Emitter open)
2SC1384
60
Collector-emitter voltage
2SC1383
V
CEO
I
C
= 2 mA, I
B
= 0
25
V
(Base open)
2SC1384
50
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 µA, I
C
= 0
5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 20 V, I
E
= 0
0.1
µA
Forward current transfer ratio
*
1
h
FE1
*
2
V
CE
= 10 V, I
C
= 500 mA
85
340
h
FE2
V
CE
= 5 V, I
C
= 1 A
50
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 500 mA, I
B
= 50 mA
0.2
0.4
V
Base-emitter saturation voltage
V
BE(sat)
I
C
= 500 mA, I
B
= 50 mA
0.85
1.20
V
Transition frequency
f
T
V
CB
= 10 V, I
E
= −50 mA, f = 200 MHz
200
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
11
20
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Rank
Q
R
S
h
FE1
85 to 170
120 to 240
170 to 340
Publication date: March 2003
SJC00104CED
1
■
2SC1383, 2SC1384
P
C
T
a
I
C
V
CE
I
C
I
B
1.2
1.50
1.2
T
a
= 25°C
V
CE
= 10 V
T
a
=
25
°
C
1.0
1.25
I
B
=
10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1.0
0.8
1.00
0.8
0.6
0.75
0.6
0.4
0.50
0.4
0.2
0.25
1 mA
0.2
0
0
40
80
120
160
0
0
2
4
6
8
10
0
0
2
4
6
8
10
12
Ambient temperature T
a
(°C)
Collector-emitter voltage V
CE
(V)
Base current I
B
(mA)
V
CE(sat)
I
C
V
BE(sat)
I
C
h
FE
I
C
10
I
C
/ I
B
=
10
100
I
C
/ I
B
=
10
600
V
CE
= 10 V
500
1
10
T
a
=
75
°
C
400
25
°
C
25
C
T
a
=
−
25
C
−
25
C
0.1
1
300
75
°
C
T
a
= 75°C
200
25°C
−25°C
0.01
0.1
100
0.001
0.01
0
0.01
0.1
1
10
0.01
0.1
1
10
0.01
0.1
1
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
f
T
I
E
C
ob
V
CB
V
CER
R
BE
200
V
CB
=
10 V
50
120
I
E
= 0
f = 1 MHz
T
a
= 25°C
I
C
= 10 mA
T
a
= 25°C
T
a
=
25
°
C
160
40
100
80
120
30
60
2SC1384
80
20
40
2SC1383
40
10
20
0
−1
−10
−100
0
1
10
100
0
0.1
1
10
100
Emitter current I
E
(mA)
Collector-base voltage V
CB
(V)
Base-emitter resistance R
BE
(kΩ)
2
SJC00104CED
°
°
°
2SC1383, 2SC1384
I
CEO
T
a
Safe operation area
10
4
V
CE
=
10 V
10
Single pulse
T
a
=
25
C
10
3
1
I
CP
I
C
t
=
10 ms
t = 1 s
10
2
0.1
10
0.01
1
0
40
80
120
160
0.001
0.1
1
10
100
Ambient temperature T
a
(°C)
Collector-emitter voltage V
CE
(V)
SJC00104CED
3
°
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
This datasheet has been download from:
Datasheets for electronics components.
[ Pobierz całość w formacie PDF ]
zanotowane.pl doc.pisz.pl pdf.pisz.pl charloteee.keep.pl
Transistors
2SC1383, 2SC1384
Silicon NPN epitaxial planar type
Unit: mm
For low-frequency power amplification and driver amplification
Complementary to 2SA0683, 2SA0684
5.9
±
0.2
4.9
±
0.2
Features
• Low collector-emitter saturation voltage V
CE(sat)
• Complementary pair with 2SA0683, 2SA0684
0.7
±
0.1
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SC1383
V
CBO
30
V
0.45
+0.2
–0.1
0.45
+0.2
–0.1
(Emitter open)
2SC1384
60
(1.27)
(1.27)
1: Emitter
2: Collector
3: Base
EIAJ: SC-51
TO-92L-A1 Package
Collector-emitter voltage
2SC1383
V
CEO
25
V
13
2
(Base open)
2SC1384
50
2.54
±
0.15
Emitter-base voltage (Collector open) V
EBO
5
V
Collector current
I
C
1
A
Peak collector current
I
CP
1.5
A
Collector power dissipation
P
C
1
W
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
2SC1383
V
CBO
I
C
= 10 µA, I
E
= 0
30
V
(Emitter open)
2SC1384
60
Collector-emitter voltage
2SC1383
V
CEO
I
C
= 2 mA, I
B
= 0
25
V
(Base open)
2SC1384
50
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 µA, I
C
= 0
5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 20 V, I
E
= 0
0.1
µA
Forward current transfer ratio
*
1
h
FE1
*
2
V
CE
= 10 V, I
C
= 500 mA
85
340
h
FE2
V
CE
= 5 V, I
C
= 1 A
50
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 500 mA, I
B
= 50 mA
0.2
0.4
V
Base-emitter saturation voltage
V
BE(sat)
I
C
= 500 mA, I
B
= 50 mA
0.85
1.20
V
Transition frequency
f
T
V
CB
= 10 V, I
E
= −50 mA, f = 200 MHz
200
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
11
20
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Rank
Q
R
S
h
FE1
85 to 170
120 to 240
170 to 340
Publication date: March 2003
SJC00104CED
1
■
2SC1383, 2SC1384
P
C
T
a
I
C
V
CE
I
C
I
B
1.2
1.50
1.2
T
a
= 25°C
V
CE
= 10 V
T
a
=
25
°
C
1.0
1.25
I
B
=
10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1.0
0.8
1.00
0.8
0.6
0.75
0.6
0.4
0.50
0.4
0.2
0.25
1 mA
0.2
0
0
40
80
120
160
0
0
2
4
6
8
10
0
0
2
4
6
8
10
12
Ambient temperature T
a
(°C)
Collector-emitter voltage V
CE
(V)
Base current I
B
(mA)
V
CE(sat)
I
C
V
BE(sat)
I
C
h
FE
I
C
10
I
C
/ I
B
=
10
100
I
C
/ I
B
=
10
600
V
CE
= 10 V
500
1
10
T
a
=
75
°
C
400
25
°
C
25
C
T
a
=
−
25
C
−
25
C
0.1
1
300
75
°
C
T
a
= 75°C
200
25°C
−25°C
0.01
0.1
100
0.001
0.01
0
0.01
0.1
1
10
0.01
0.1
1
10
0.01
0.1
1
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
f
T
I
E
C
ob
V
CB
V
CER
R
BE
200
V
CB
=
10 V
50
120
I
E
= 0
f = 1 MHz
T
a
= 25°C
I
C
= 10 mA
T
a
= 25°C
T
a
=
25
°
C
160
40
100
80
120
30
60
2SC1384
80
20
40
2SC1383
40
10
20
0
−1
−10
−100
0
1
10
100
0
0.1
1
10
100
Emitter current I
E
(mA)
Collector-base voltage V
CB
(V)
Base-emitter resistance R
BE
(kΩ)
2
SJC00104CED
°
°
°
2SC1383, 2SC1384
I
CEO
T
a
Safe operation area
10
4
V
CE
=
10 V
10
Single pulse
T
a
=
25
C
10
3
1
I
CP
I
C
t
=
10 ms
t = 1 s
10
2
0.1
10
0.01
1
0
40
80
120
160
0.001
0.1
1
10
100
Ambient temperature T
a
(°C)
Collector-emitter voltage V
CE
(V)
SJC00104CED
3
°
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
This datasheet has been download from:
Datasheets for electronics components.
[ Pobierz całość w formacie PDF ]