2SA1358, Elektronika, RTV Serwis, Aplikacje US, TRANZYSTORY

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2SA1358
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1358
Audio Frequency Power Amplifier Applications
Unit: mm

Complementary to 2SC3421

Suitable for driver of 60 to 80 watts

High breakdown voltage
Absolute Maximum Ratings
(Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
−120
V
Collector-emitter voltage
V
CEO
−120
V
Emitter-base voltage
V
EBO
−5
V
Collector current
I
C
−1
A
Base current
I
B
−100
mA
Collector power
dissipation
Ta = 25°C
1.5
P
C
W
Tc = 25°C
10
JEDEC ―
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
−55 to 150
°C
JEITA

Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
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2006-11-09
2SA1358
Electrical Characteristics
(Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
CB
= −120 V, I
E
= 0
― ― −100
nA
Emitter cut-off current
I
EBO
EB
= −5 V, I
C
= 0
― ― −100
nA
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
= −10 mA, I
B
= 0
−120
― ―
V
Emitter-base breakdown voltage
V
(BR) EBO
I
E
= −1 mA, I
C
= 0
−5 ― ―
V
DC current gain
h
FE
(Note)
V
CE
= −5 V, I
C
= −100 mA
80 ―
240
Collector-emitter saturation voltage
V
CE (sat)
I
C
= −500 mA, I
B
= −50 mA
― −0.40 −1.0
V
Base-emitter voltage
V
BE
CE
= −5 V, I
C
= −500 mA

−0.77 −1.0
V
Transition frequency
f
T
V
CE
= −5 V, I
C
= −100 mA

120 ―
MHz
Collector output capacitance
C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz ―
30 ―
pF
Note: h
FE
classification O: 80 to 160, Y: 120 to 240
Marking
Lot No.
Characteristics indicator
A1358
Part No. (or abbreviation code)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2006-11-09
2SA1358
I
C
– V
CE
h
FE
– I
C
−1200
1000
Common emitter
Tc = 2 5 ° C
−15
500
Common emitter
V
CE
= −5 V
−1000
−10
300
Tc = 100°C
−800
25
−7
100
−600
−5
−25
−4
50
−400
−3
30
−3
−10
−30 −100
−300
−1000
−2
−200
I
B
= −1 mA
Collector current I
C
(mA)
0
0
0
−2
−4
−6 −8
−10
−12
Collector-emitter voltage V
CE
(V)
V
CE (sat)
– I
C
I
C
– V
BE
−3
−1000
Common emitter
I
C
/I
B
= 10
Common emitter
V
CE
= −5 V
−1
−800
−0.5
−0.3
−600
Tc = 100°C
−25
Tc = 100°C
25
−25
−400
−0.1
−0.05
−200
25
−0.03
−3
−10
−30 −100
−300
−1000
Collector current I
C
(mA)
0
0
−0.2 −0.4
−0.6
−0.8 −1.0
−1.2
Base-emitter voltage V
BE
(V)
Safe Operating Area
P
C
– Ta
−3000
I
C
max (pulsed)*
12
1 ms*
10 ms*
I
C
max (continuous)
(1) Tc = Ta Infinite heat sink
(2) No heat sink
−1000
100 ms*
(1)
10
−500
8
−300
DC operation
Tc = 25°C
6
−100
4
−50
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
−30
2
(2)
V
CEO
max
0
−10
0
20
40
60
80
100
120 140 160
−3 −10 −30 −100 −300
Ambient temperature Ta (°C)
Collector-emitter voltage V
CE
(V)
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2006-11-09
2SA1358
RESTRICTIONS ON PRODUCT USE
20070701-EN

The information contained herein is subject to change without notice.

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.

The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.

The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.

The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.

Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
4
2006-11-09
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