2N6098

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SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6098 2N6099 2N6100 2N6101
DESCRIPTION
·With TO-220 package
·High current capability
APPLICATIONS
·For use in general-purpose amplifier
and switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25
)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
2N6098
70
V
CBO
Collector-base voltage
2N6099
Open emitter
70
V
2N6100
80
2N6101
80
2N6098
70
2N6099
70
V
CEO
Collector-emitter voltage
Open base
V
2N6100
80
2N6101
80
V
EBO
Emitter-base voltage
Open collector
8
V
I
C
Collector current
10
A
P
T
Total power dissipation
T
C
=25
75
W
T
j
Junction temperature
150
T
stg
Storage temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
R
th j-c
Thermal resistance from junction to case
1.67
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6098 2N6099 2N6100 2N6101
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2N6098
70
2N6099
70
Collector-emitter
sustaining voltage
V
CEO(SUS)
I
C
=0.1A ;I
B
=0
V
2N6100
80
2N6101
80
V
CEsat-1
Collector-emitter saturation voltage
I
C
=5A;I
B
=0.5A
1.3
V
V
CEsat-2
Collector-emitter saturation voltage
I
C
=10A;I
B
=2.5A
3.5
V
2N6098/6099 I
C
=4A ; V
CE
=4V
V
BE
Base-emitter on voltage
1.3
V
2N6100/6101 I
C
=5A ; V
CE
=4V
I
CBO
Collector cut-off current
V
CB
=Rated V
CBO
;I
E
=0
T
C
=150
0.5
2.0
mA
I
EBO
Emitter cut-off current
V
EB
=8V; I
C
=0
1.0
mA
2N6098/6099 I
C
=4A ; V
CE
=4V
h
FE
DC current gain
20
80
2N6100/6101 I
C
=5A ; V
CE
=4V
f
T
Transition frequency
I
C
=1A ; V
CE
=10V
0.8
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6098 2N6099 2N6100 2N6101
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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