2n4401, Elektronika, Datashet, tranzystory
[ Pobierz całość w formacie PDF ]
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N4400/D
NPN Silicon
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Collector – Emitter Voltage
V
CEO
40
Vdc
Collector – Base Voltage
V
CBO
60
Vdc
Emitter – Base Voltage
V
EBO
6.0
Vdc
Collector Current — Continuous
I
C
600
mAdc
Total Device Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
P
D
625
5.0
mW
mW/
°
C
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
1.5
12
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
– 55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
JA
200
°
C/W
Thermal Resistance, Junction to Case
R
JC
83.3
°
C/W
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(1)
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
40
—
Vdc
Collector – Base Breakdown Voltage
(I
C
= 0.1 mAdc, I
E
= 0)
V
(BR)CBO
60
—
Vdc
Emitter – Base Breakdown Voltage
(I
E
= 0.1 mAdc, I
C
= 0)
V
(BR)EBO
6.0
—
Vdc
Base Cutoff Current
(V
CE
= 35 Vdc, V
EB
= 0.4 Vdc)
I
BEV
—
0.1
m
Adc
Collector Cutoff Current
(V
CE
= 35 Vdc, V
EB
= 0.4 Vdc)
I
CEX
—
0.1
m
Adc
1. Pulse Test: Pulse Width
3
300
s, Duty Cycle
3
2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
W
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
(1)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
h
FE
—
2N4401
20
—
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
2N4400
2N4401
20
40
—
—
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
2N4400
2N4401
40
80
—
—
(I
C
= 150 mAdc, V
CE
= 1.0 Vdc)
2N4400
2N4401
50
100
150
300
(I
C
= 500 mAdc, V
CE
= 2.0 Vdc)
2N4400
2N4401
20
40
—
—
Collector – Emitter Saturation Voltage (I
C
= 150 mAdc, I
B
= 15 mAdc)
Collector – Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
CE(sat)
—
—
0.4
0.75
Vdc
Base – Emitter Saturation Voltage (I
C
= 150 mAdc, I
B
= 15 mAdc)
Base – Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
BE(sat)
0.75
—
0.95
1.2
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(I
C
= 20 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
f
T
MHz
2N4400
2N4401
200
250
—
—
Collector–Base Capacitance (V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
C
cb
—
6.5
pF
Emitter–Base Capacitance (V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
eb
—
30
pF
Input Impedance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
ie
k ohms
2N4400
2N4401
0.5
1.0
7.5
15
Voltage Feedback Ratio (I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
re
0.1
8.0
X 10
–4
Small–Signal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
fe
—
2N4400
2N4401
20
40
250
500
Output Admittance (I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
oe
1.0
30
m
mhos
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= 30 Vdc, V
BE
= 2.0 Vdc,
I
C
= 150 mAdc, I
B1
= 15 mAdc)
t
d
—
15
ns
(V
CC
= 30 Vdc, V
BE
= 2.0 Vdc,
I
C
= 150 mAdc, I
B1
= 15 mAdc)
Rise Time
t
r
—
20
ns
Storage Time
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
= I
B2
= 15 mAdc)
t
s
—
225
ns
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
= I
B2
= 15 mAdc)
Fall Time
t
f
—
30
ns
1. Pulse Test: Pulse Width
3
300
s, Duty Cycle
3
2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V
+ 30 V
s,
DUTY CYCLE
m
200
W
s,
DUTY CYCLE
m
200
W
+16 V
9
2.0%
+16 V
9
2.0%
0
0
1.0 k
W
– 2.0 V
1.0 k
W
C
S
* < 10 pF
–14 V
C
S
* < 10 pF
< 2.0 ns
< 20 ns
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
– 4.0 V
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1.0 to 100
1.0 to 100
TRANSIENT CHARACTERISTICS
25
°
C
100
°
C
30
10
7.0
V
CC
= 30 V
I
C
/I
B
= 10
20
5.0
3.0
C
obo
2.0
Q
T
10
7.0
1.0
0.7
0.5
5.0
C
cb
0.3
0.2
3.0
Q
A
2.0
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10 20
30 50
0.1
10
20
30
50 70 100
200
300
500
REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Capacitances
Figure 4. Charge Data
100
100
70
I
C
/I
B
= 10
70
V
CC
= 30 V
I
C
/I
B
= 10
t
r
50
50
30
t
r
@ V
CC
= 30 V
t
r
@ V
CC
= 10 V
t
d
@ V
EB
= 2.0 V
t
d
@ V
EB
= 0
30
t
f
20
20
10
10
7.0
7.0
5.0
5.0
10
20
30
50 70 100
200 300
500
10
20
30
50 70 100
200 300
500
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Rise and Fall Times
300
100
= t
s
– 1/8 t
f
I
B1
= I
B2
I
C
/I
B
= 10 to 20
70
V
CC
= 30 V
I
B1
= I
B2
200
50
I
C
/I
B
= 20
30
100
20
I
C
/I
B
= 10
70
50
10
7.0
30
5.0
10
20
30
50 70 100
200 300
500
10
20
30
50 70 100
200 300
500
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
t
s
4
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
V
CE
= 10 Vdc, T
A
= 25
°
C
Ban
d
width = 1.0 Hz
10
10
I
C
= 1.0 mA, R
S
= 150
W
I
C
= 500
f = 1.0 kHz
8.0
m
A, R
S
= 200
W
R
S
= OPTIMUM
RS =
SOURCE
RS =
RESISTANCE
8.0
I
C
= 100
m
A, R
S
= 2.0 k
W
I
C
= 50
m
A
I
C
= 100
I
C
= 50
m
A, R
S
= 4.0 k
W
m
A
6.0
6.0
A
I
C
= 1.0 mA
m
4.0
4.0
2.0
2.0
0.01 0.02 0.05
0.1
0.2
0.5
1.0
2.0 5.0 10 20 50
100
0
50 100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k
100 k
f, FREQUENCY (kHz)
R
S
, SOURCE RESISTANCE (OHMS)
Figure 9. Frequency Effects
Figure 10. Source Resistance Effects
h PARAMETERS
V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25
°
C
This group of graphs illustrates the relationship between
h
fe
and other “h” parameters for this series of transistors. To
obtain these curves, a high–gain and a low–gain unit were
selected from both the 2N4400 and 2N4401 lines, and the
same units were used to develop the correspondingly num-
bered curves on each graph.
300
50 k
200
20 k
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
10 k
100
70
5.0 k
50
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
2.0 k
30
1.0 k
20
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
500
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Current Gain
Figure 12. Input Impedance
10
100
7.0
5.0
50
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
3.0
2.0
20
10
1.0
0.7
0.5
5.0
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
0.3
2.0
0.2
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
1.0
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 13. Voltage Feedback Ratio
Figure 14. Output Admittance
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
I
C
= 500
0
STATIC CHARACTERISTICS
3.0
2.0
V
CE
= 1.0 V
V
CE
= 10 V
T
J
= 125
°
C
1.0
25
°
C
0.7
0.5
– 55
°
C
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0 3.0
5.0 7.0
10
20
30
50
70
100
200 300
500
I
C
, COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
1.0
0.8
T
J
= 25
°
C
0.6
I
C
= 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2 0.3
0.5
0.7
1.0
2.0 3.0
5.0 7.0
10
20 30
50
I
B
, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.0
+ 0.5
T
J
= 25
°
C
V
BE(sat)
@ I
C
/I
B
= 10
0.8
0
VC
for V
CE(sat)
– 0.5
0.6
V
BE
@ V
CE
= 10 V
– 1.0
0.4
– 1.5
0.2
V
CE(sat)
@ I
C
/I
B
= 10
– 2.0
VB
for V
BE
0
– 2.5
0.1 0.2 0.5
1.0 2.0 5.0 10 20 50
100
200
500
0.1 0.2 0.5
1.0 2.0 5.0 10 20
50 100
200
500
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 17. “On” Voltages
Figure 18. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
[ Pobierz całość w formacie PDF ]
zanotowane.pl doc.pisz.pl pdf.pisz.pl charloteee.keep.pl
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N4400/D
NPN Silicon
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Collector – Emitter Voltage
V
CEO
40
Vdc
Collector – Base Voltage
V
CBO
60
Vdc
Emitter – Base Voltage
V
EBO
6.0
Vdc
Collector Current — Continuous
I
C
600
mAdc
Total Device Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
P
D
625
5.0
mW
mW/
°
C
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
1.5
12
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
– 55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
JA
200
°
C/W
Thermal Resistance, Junction to Case
R
JC
83.3
°
C/W
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(1)
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
40
—
Vdc
Collector – Base Breakdown Voltage
(I
C
= 0.1 mAdc, I
E
= 0)
V
(BR)CBO
60
—
Vdc
Emitter – Base Breakdown Voltage
(I
E
= 0.1 mAdc, I
C
= 0)
V
(BR)EBO
6.0
—
Vdc
Base Cutoff Current
(V
CE
= 35 Vdc, V
EB
= 0.4 Vdc)
I
BEV
—
0.1
m
Adc
Collector Cutoff Current
(V
CE
= 35 Vdc, V
EB
= 0.4 Vdc)
I
CEX
—
0.1
m
Adc
1. Pulse Test: Pulse Width
3
300
s, Duty Cycle
3
2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
W
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
(1)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
h
FE
—
2N4401
20
—
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
2N4400
2N4401
20
40
—
—
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
2N4400
2N4401
40
80
—
—
(I
C
= 150 mAdc, V
CE
= 1.0 Vdc)
2N4400
2N4401
50
100
150
300
(I
C
= 500 mAdc, V
CE
= 2.0 Vdc)
2N4400
2N4401
20
40
—
—
Collector – Emitter Saturation Voltage (I
C
= 150 mAdc, I
B
= 15 mAdc)
Collector – Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
CE(sat)
—
—
0.4
0.75
Vdc
Base – Emitter Saturation Voltage (I
C
= 150 mAdc, I
B
= 15 mAdc)
Base – Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
BE(sat)
0.75
—
0.95
1.2
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(I
C
= 20 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
f
T
MHz
2N4400
2N4401
200
250
—
—
Collector–Base Capacitance (V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
C
cb
—
6.5
pF
Emitter–Base Capacitance (V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
eb
—
30
pF
Input Impedance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
ie
k ohms
2N4400
2N4401
0.5
1.0
7.5
15
Voltage Feedback Ratio (I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
re
0.1
8.0
X 10
–4
Small–Signal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
fe
—
2N4400
2N4401
20
40
250
500
Output Admittance (I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
oe
1.0
30
m
mhos
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= 30 Vdc, V
BE
= 2.0 Vdc,
I
C
= 150 mAdc, I
B1
= 15 mAdc)
t
d
—
15
ns
(V
CC
= 30 Vdc, V
BE
= 2.0 Vdc,
I
C
= 150 mAdc, I
B1
= 15 mAdc)
Rise Time
t
r
—
20
ns
Storage Time
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
= I
B2
= 15 mAdc)
t
s
—
225
ns
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
= I
B2
= 15 mAdc)
Fall Time
t
f
—
30
ns
1. Pulse Test: Pulse Width
3
300
s, Duty Cycle
3
2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V
+ 30 V
s,
DUTY CYCLE
m
200
W
s,
DUTY CYCLE
m
200
W
+16 V
9
2.0%
+16 V
9
2.0%
0
0
1.0 k
W
– 2.0 V
1.0 k
W
C
S
* < 10 pF
–14 V
C
S
* < 10 pF
< 2.0 ns
< 20 ns
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
– 4.0 V
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1.0 to 100
1.0 to 100
TRANSIENT CHARACTERISTICS
25
°
C
100
°
C
30
10
7.0
V
CC
= 30 V
I
C
/I
B
= 10
20
5.0
3.0
C
obo
2.0
Q
T
10
7.0
1.0
0.7
0.5
5.0
C
cb
0.3
0.2
3.0
Q
A
2.0
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10 20
30 50
0.1
10
20
30
50 70 100
200
300
500
REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Capacitances
Figure 4. Charge Data
100
100
70
I
C
/I
B
= 10
70
V
CC
= 30 V
I
C
/I
B
= 10
t
r
50
50
30
t
r
@ V
CC
= 30 V
t
r
@ V
CC
= 10 V
t
d
@ V
EB
= 2.0 V
t
d
@ V
EB
= 0
30
t
f
20
20
10
10
7.0
7.0
5.0
5.0
10
20
30
50 70 100
200 300
500
10
20
30
50 70 100
200 300
500
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Rise and Fall Times
300
100
= t
s
– 1/8 t
f
I
B1
= I
B2
I
C
/I
B
= 10 to 20
70
V
CC
= 30 V
I
B1
= I
B2
200
50
I
C
/I
B
= 20
30
100
20
I
C
/I
B
= 10
70
50
10
7.0
30
5.0
10
20
30
50 70 100
200 300
500
10
20
30
50 70 100
200 300
500
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
t
s
4
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
V
CE
= 10 Vdc, T
A
= 25
°
C
Ban
d
width = 1.0 Hz
10
10
I
C
= 1.0 mA, R
S
= 150
W
I
C
= 500
f = 1.0 kHz
8.0
m
A, R
S
= 200
W
R
S
= OPTIMUM
RS =
SOURCE
RS =
RESISTANCE
8.0
I
C
= 100
m
A, R
S
= 2.0 k
W
I
C
= 50
m
A
I
C
= 100
I
C
= 50
m
A, R
S
= 4.0 k
W
m
A
6.0
6.0
A
I
C
= 1.0 mA
m
4.0
4.0
2.0
2.0
0.01 0.02 0.05
0.1
0.2
0.5
1.0
2.0 5.0 10 20 50
100
0
50 100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k
100 k
f, FREQUENCY (kHz)
R
S
, SOURCE RESISTANCE (OHMS)
Figure 9. Frequency Effects
Figure 10. Source Resistance Effects
h PARAMETERS
V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25
°
C
This group of graphs illustrates the relationship between
h
fe
and other “h” parameters for this series of transistors. To
obtain these curves, a high–gain and a low–gain unit were
selected from both the 2N4400 and 2N4401 lines, and the
same units were used to develop the correspondingly num-
bered curves on each graph.
300
50 k
200
20 k
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
10 k
100
70
5.0 k
50
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
2.0 k
30
1.0 k
20
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
500
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Current Gain
Figure 12. Input Impedance
10
100
7.0
5.0
50
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
3.0
2.0
20
10
1.0
0.7
0.5
5.0
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
0.3
2.0
0.2
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
1.0
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 13. Voltage Feedback Ratio
Figure 14. Output Admittance
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
I
C
= 500
0
STATIC CHARACTERISTICS
3.0
2.0
V
CE
= 1.0 V
V
CE
= 10 V
T
J
= 125
°
C
1.0
25
°
C
0.7
0.5
– 55
°
C
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0 3.0
5.0 7.0
10
20
30
50
70
100
200 300
500
I
C
, COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
1.0
0.8
T
J
= 25
°
C
0.6
I
C
= 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2 0.3
0.5
0.7
1.0
2.0 3.0
5.0 7.0
10
20 30
50
I
B
, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.0
+ 0.5
T
J
= 25
°
C
V
BE(sat)
@ I
C
/I
B
= 10
0.8
0
VC
for V
CE(sat)
– 0.5
0.6
V
BE
@ V
CE
= 10 V
– 1.0
0.4
– 1.5
0.2
V
CE(sat)
@ I
C
/I
B
= 10
– 2.0
VB
for V
BE
0
– 2.5
0.1 0.2 0.5
1.0 2.0 5.0 10 20 50
100
200
500
0.1 0.2 0.5
1.0 2.0 5.0 10 20
50 100
200
500
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 17. “On” Voltages
Figure 18. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
[ Pobierz całość w formacie PDF ]